Intersubband Transitions In Quantum Structures
1st Edition
0071457925
·
9780071457927
© 2006 | Published: April 13, 2006
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.Advances in epitaxial growth and nanofabrication technology…
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Chapter 1. Quantum Cascade Lasers: Overview of Basic Principles of Operation and State of the Art C. Sirtori (Université Paris 7 and THALES Research & Technology, France) and R. Teissier (Université Montpellier 2, France)Chapter 2. Terahertz Quantum Cascade Lasers A. Tredicucci (Scuola Normale Superiore, Italy) and R. Köhler (Scuola Normale Superiore, Italy)Chapter 3. High-Speed Operation and Ultrafast Pulse Generation with Quantum Cascade Lasers R. Paiella (Boston University), R. Martini (Stevens Institute of Technology), A. Soibel (Jet Propulsion Laboratory, Caltech), H.C. Liu (National Research Council, Canada), and F. Capasso (Harvard University)Chapter 4. Ultrafast Dynamics of Intersubband Excitations in Quantum Wells and Quantum Cascade StructuresT. Elsaesser (Max Born Institute, Germany)Chapter 5. Optical Nonlinearities in Intersubband Transitions and Quantum Cascade Lasers C. Gmachl (Princeton University), O. Malis (Bell Labs, Lucent Technologies), and A. Belyanin (Texas A&M University)Chapter 6. Raman Injection and Inversionless Intersubband LasersA. Belyanin (Texas A&M University), M. Troccoli (Harvard University), and F. Capasso (Harvard University) Chapter 7. Quantum Well Infrared Photodetector – High Absorption and High Speed Properties, and Two-Photon Response H.C. Liu (National Research Council, Canada) and H. Schneider (Institute of Ion-Beam Physics and Material Research, Germany)Chapter 8. Intersubband Transitions in Quantum DotsP. Bhattacharya (University of Michigan), A.D. Stiff-Roberts (Duke University), X. Su (University of Michigan), S. Chakrabarti (University of Michigan), and C.H. Fischer (MIT Lincoln Lab)Chapter 9. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum WellsH. Sigg (Paul Scherrer Institute, Switzerland)Chapter 10. All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb HeterostructuresA. Neogi (University of North Texas)
Chapter 3. High-Speed Operation and Ultrafast Pulse Generation with Quantum Cascade Lasers R. Paiella (Boston University), R. Martini (Stevens Institute of Technology), A. Soibel (Jet Propulsion Laboratory, Caltech), H.C. Liu (National Research Council, Canada), and F. Capasso (Harvard University)Chapter 4. Ultrafast Dynamics of Intersubband Excitations in Quantum Wells and Quantum Cascade StructuresT. Elsaesser (Max Born Institute, Germany)Chapter 5. Optical Nonlinearities in Intersubband Transitions and Quantum Cascade Lasers C. Gmachl (Princeton University), O. Malis (Bell Labs, Lucent Technologies), and A. Belyanin (Texas A&M University)Chapter 6. Raman Injection and Inversionless Intersubband LasersA. Belyanin (Texas A&M University), M. Troccoli (Harvard University), and F. Capasso (Harvard University) Chapter 7. Quantum Well Infrared Photodetector – High Absorption and High Speed Properties, and Two-Photon Response H.C. Liu (National Research Council, Canada) and H. Schneider (Institute of Ion-Beam Physics and Material Research, Germany)Chapter 8. Intersubband Transitions in Quantum DotsP. Bhattacharya (University of Michigan), A.D. Stiff-Roberts (Duke University), X. Su (University of Michigan), S. Chakrabarti (University of Michigan), and C.H. Fischer (MIT Lincoln Lab)Chapter 9. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum WellsH. Sigg (Paul Scherrer Institute, Switzerland)Chapter 10. All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb HeterostructuresA. Neogi (University of North Texas)
Chapter 5. Optical Nonlinearities in Intersubband Transitions and Quantum Cascade Lasers C. Gmachl (Princeton University), O. Malis (Bell Labs, Lucent Technologies), and A. Belyanin (Texas A&M University)Chapter 6. Raman Injection and Inversionless Intersubband LasersA. Belyanin (Texas A&M University), M. Troccoli (Harvard University), and F. Capasso (Harvard University) Chapter 7. Quantum Well Infrared Photodetector – High Absorption and High Speed Properties, and Two-Photon Response H.C. Liu (National Research Council, Canada) and H. Schneider (Institute of Ion-Beam Physics and Material Research, Germany)Chapter 8. Intersubband Transitions in Quantum DotsP. Bhattacharya (University of Michigan), A.D. Stiff-Roberts (Duke University), X. Su (University of Michigan), S. Chakrabarti (University of Michigan), and C.H. Fischer (MIT Lincoln Lab)Chapter 9. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum WellsH. Sigg (Paul Scherrer Institute, Switzerland)Chapter 10. All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb HeterostructuresA. Neogi (University of North Texas)
Chapter 7. Quantum Well Infrared Photodetector – High Absorption and High Speed Properties, and Two-Photon Response H.C. Liu (National Research Council, Canada) and H. Schneider (Institute of Ion-Beam Physics and Material Research, Germany)Chapter 8. Intersubband Transitions in Quantum DotsP. Bhattacharya (University of Michigan), A.D. Stiff-Roberts (Duke University), X. Su (University of Michigan), S. Chakrabarti (University of Michigan), and C.H. Fischer (MIT Lincoln Lab)Chapter 9. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum WellsH. Sigg (Paul Scherrer Institute, Switzerland)Chapter 10. All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb HeterostructuresA. Neogi (University of North Texas)
Chapter 9. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum WellsH. Sigg (Paul Scherrer Institute, Switzerland)Chapter 10. All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb HeterostructuresA. Neogi (University of North Texas)
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.
Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.